SEMICONDUCTOR DIODA

  Average Rectified Peak Surge Average
  Current Current,Ifsm Forward
  PIV Forward(Reverse) 1sec.@25C Voltage, Vf
Device type Material (Volts) Io(A)(Ir(A)) (A) (Volts)

1N34 Signal Germanium 60 8.5m(15.0u) - 1.0
1N34A Signal Germanium 60 5.0m(30.0u) - 1.0
1N67A Signal Germanium 100 4.0m( 5.0u) - 1.0
1N191 Signal Germanium 90 5.0m - 1.0
1N270 Signal Germanium 80 0.2 (100u) - 1.0
1N914 Fast Silicon(Si) 75 10.0m(25.0n) 0.5 1.0
  Switch
1N1184 (RFR) Si 100 35.0m(10m ) - 1.7
  Rectifier
  Fast
  Recovery
1N2071 RFR Si 600 0.75m(10.0u) - 0.6
1N3666 Signal Germanium 80 0.2m(25.0u) - 1.0
1N4001 RFR Si 50 1.0 (0.03m) - 1.1
1N4002 RFR Si 100 1.0 (0.03m) - 1.1
1N4003 RFR Si 200 1.0 (0.03m) - 1.1
1N4004 RFR Si 400 1.0 (0.03m) - 1.1
1N4005 RFR Si 600 1.0 (0.03m) - 1.1
1N4006 RFR Si 800 1.0 (0.03m) - 1.1
1N4007 RFR Si 1000 1.0 (0.03m) - 1.1
 
  Average Rectified Peak Surge Average
  Current Current,Ifsm Forward
  PIV Forward(Reverse) 1sec.@25C Voltage, Vf
Device type Material (Volts) Io(A)(Ir(A)) (A) (Volts)

1N4148 Signal Si 75 10.0m(25.0n) - 1.0
1N4149 Signal Si 75 10.0m(25.0n) - 1.0
1N914 Fast Si 40 20.0m(0.05u) - 0.8
  Switch
1N4445 Signal Si 100 0.1(50.0n) - 1.0
1N5400 RFR Si 50 3.0 200 - 
1N5401 RFR Si 100 3.0 200 - 
1N5402 RFR Si 200 3.0 200 - 
1N5403 RFR Si 300 3.0 200 - 
1N5404 RFR Si 400 3.0 200 - 
1N5405 RFR Si 500 3.0 200 - 
1N5406 RFR Si 600 3.0 200 - 
1N5767 Signal Si - 0.1(1.0u) - 1.0
EGC5863 RFR Si 600 6 150 0.9
source from qsl